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Работы, на которые ссылается эта работа
Работ: 29
Работа: Growth and structural study of the solid solution Si1−xGex (0 < x < 1)
Si‐Ge‐Metal Ternary Phase Diagram Calculations
Jean‐Pierre Fleurial, A. Borshchevsky
Статья1990Цитирований: 4ABIThermal stress analysis of crystal growth in a horizontal Bridgman furnace
Gregory Young, Karen A. McDonald, Ahmet Palazoğlu
Статья1997Цитирований: 3ABIObtaining Si-Si<sub>1-x</sub>Ge<sub>x</sub>-(Si<sub>1-x</sub>Ge<sub>x</sub>)<sub>1-z</sub>(Al<sub>1-y</sub>Ga<sub>y</sub>As)<sub>z</sub>-Si<sub>1-x</sub>Ge<sub>x</sub>-(Si<sub>1-x</sub>Ge<sub>x</sub>)<sub>1-z</sub>(Al<sub>1-y</sub>Ga<sub>y</sub>As)<sub>z</sub> Structures from a Tin Solution-Melt in a Single Technological Cycle
A.S. Saidov, A. Sh. Razzokov, С.И. Петрушенко +1
ABIEnergetic and kinetic aspects of the growth of pseudomorphic SiGe islands
Michael Becker, Silke Christiansen, M. Albrecht +2
Статья2008Цитирований: 2ABIGrowth evolution of SiGe graded buffers during LPE cooling process
Jun Wang, Yu-Jack Shen, Nathaniel J. Quitoriano
Статья2018Цитирований: 2ABILiquid phase epitaxy SiGe films on a CVD-grown SiGe/Si (0 0 1) graded film
Jun Wang, Christopher Heidelberger, Eugene A. Fitzgerald +1
Статья2020Цитирований: 2ABI