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Работ: 8
Работа: Composition and Structure of a Nanofilm Multilayer System of the SiO2/Si/CoSi2/Si(111) Type Obtained via Ion Implantation
On the synthesis of nanoscale phases of metal silicides in the near-surface region of silicon and the study of their electronic structures by passing light
Y. S. Ergashov, Д. А. Ташмухамедова, Б. Е. Умирзаков
СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2017Цитирований: 21ABIStructure and electronic properties of nanoscale phases and nanofilms of metal silicides produced by ion implantation in combination with annealing
Kh. Kh. Boltaev, Д. А. Ташмухамедова, Б. Е. Умирзаков
СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2014Цитирований: 14ABIApplying low-energy ion implantation in the creation of nanocontacts on the surface of ultrathin semiconductor films
D. M. Muradkabilov, Д. А. Ташмухамедова, Б. Е. Умирзаков
СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2013Цитирований: 14ABIEstimation of changes in parameters of a crystal lattice and energy bands upon variation in the size of nanocrystals and nanofilms of silicides prepared by ion implantation
Б. Е. Умирзаков, Д. А. Ташмухамедова, Kh. Kh. Kurbanov
СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2011Цитирований: 12ABI