Работы, цитирующие эту работу

Работ: 3

Работа: Ion-beam-induced amorphization and recrystallization in silicon

1. Variation of the Crystal Structure on Si(111) Surface Induced by Ion Bombardment and Subsequent Annealing

   Samad Nimatov, Б. Е. Умирзаков, F. Ya. Khudaikulov +1

   СтатьяIon-surface interactions and analysisTechnical Physics2019Цитирований: 8

   ABIABI:AkademIndex/openalex/2026.other.108398

2. Investigation of the dose dependence of the amorphization of a Si(111) surface bombarded with low-energy Na+ ions

   S. J. Nimatov, Д. С. Руми

   СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2014Цитирований: 6

   ABIABI:AkademIndex/openalex/2026.other.108394

3. The Effect of Stepwise Postimplantation Annealing on the Composition and Structure of Silicon Surface Layers Implanted with Alkali Metal Ions

   Б. Е. Умирзаков, З. А. Исаханов, G. Kh. Allaerova +1

   СтатьяSemiconductor materials and interfacesTechnical Physics Letters2021Цитирований: 0

   ABIABI:AkademIndex/openalex/2021.article.004233