Работы, цитирующие эту работу

Работ: 4

Работа: Impact of SiGe layer thickness in starting substrates on strained Ge-on-insulator pMOSFETs fabricated by Ge condensation method

1. Growth and Morphological Study of Graded-Gap Si–Si1 – xGex–GaAs Structures

   А. С. Саидов, A. Sh. Razzokov

   СтатьяSemiconductor materials and interfacesCrystallography Reports2022Цитирований: 5

   ABIABI:AkademIndex/openalex/2022.article.000489

2. Features of growing Si- and Si_1-<i>x</i>Ge_<i>x</i>-single-crystal films from solution-melt based on tin

   A. Sh. Razzokov, А. С. Саидов, V. V. Gіrzhon +1

   СтатьяSilicon Nanostructures and PhotoluminescenceJournal of Physical Studies2022Цитирований: 2

   ABIABI:AkademIndex/openalex/2022.article.000838

3. Preparation and Morphological Studies of Epitaxial Layers of a Solid Solution Si1–xGex

   А. С. Саидов, Alozhon Sh. Razzokov

   СтатьяSilicon Nanostructures and PhotoluminescenceSiberian Journal of Physics2020Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.458750

4. Getting Variable-gap Solid Solution Si1−xGex From a Liquid Phase

   A. Sh. Razzakov, A. Latipova, Alibek Qodirov

   СтатьяSemiconductor Quantum Structures and DevicesBulletin of Science and Practice2021Цитирований: 0

   ABIABI:AkademIndex/openalex/2021.article.004376