Работы, на которые ссылается эта работа

Работ: 68

Работа: Energy Levels of Nanodots Inside Semiconductor Nanowires

Electron Energy in Rectangular and Cylindrical Quantum Wires
G. Gulyamov, A. G. Gulyamov, A. B. Davlatov +1
Статья2020Цитирований: 11
ABI
Energy Levels in Nanowires and Nanorods with a Finite Potential Well
G. Gulyamov, A. G. Gulyamov, A. B. Davlatov +1
СтатьяSemiconductor Quantum Structures and DevicesAdvances in Condensed Matter Physics2020Цитирований: 11
ABI
Concentration Dependences of the Electron Effective Mass, Fermi Energy, and Filling of Subbands in Doped InAs/AlSb Quantum Wells
P. J. Baymatov, B. T. Abdulazizov
СтатьяSemiconductor Quantum Structures and DevicesUkrainian Journal of Physics2017Цитирований: 10
ABI
Band nonparabolicity effects in semiconductor quantum wells
D. F. Nelson, Robert C. Miller, D. A. Kleinman
Статья1987Цитирований: 9
ABI
Concentration, thermodynamic density of states, and entropy of electrons in semiconductor nanowires
G. Gulyamov, A. B. Davlatov, Kh. N. Juraev
СтатьяOptical properties and cooling technologies in crystalline materialsLow Temperature Physics2022Цитирований: 7
ABI
Calculation of the energy levels and wave functions of electrons in nanowires by the shooting method
G. Gulyamov, A. B. Davlatov, Sh. T. Inoyatov +1
СтатьяSemiconductor Quantum Structures and DevicesDOAJ (DOAJ: Directory of Open Access Journals)2021Цитирований: 6
ABI
Band structure of indium antimonide
E. O. Kane
Статья1957Цитирований: 4
ABI
Nonparabolicity effects in a quantum well: Sublevel shift, parallel mass, and Landau levels
U. Ekenberg
Статья1989Цитирований: 4
ABI
Phonon effects on interband optical transitions in InAs 0.8 P 0.2 /InP quantum wire
S. Saravanan, A. John Peter, Chang Woo Lee
Статья2015Цитирований: 3
ABI
Quantum Wells, Wires and Dots
P. Harrison, A. Valavanis
Книга2016Цитирований: 3
ABI
Effects of nonparabolic bands in quantum wires
A. Godoy, Zhi-Cheng Yang, Umberto Ravaioli +1
Статья2005Цитирований: 3
ABI
GaAs, AlAs, and Al<i>x</i>Ga1−<i>x</i>As: Material parameters for use in research and device applications
Sadao Adachi
Статья1985Цитирований: 3
ABI
Experiments on Ge-GaAs heterojunctions
R. L. Anderson
Статья1962Цитирований: 3
ABI
Semiconductor nanowire lasers
Yaoguang Ma, Xin Guo, Xiaoqin Wu +2
Статья2013Цитирований: 2
ABI
Exciton and Biexciton Luminescence from Single GaN/AlN Quantum Dots in Nanowires
Julien Renard, Rudeesun Songmuang, Catherine Bougerol +2
Статья2008Цитирований: 2
ABI
Ultraclean Emission from InAsP Quantum Dots in Defect-Free Wurtzite InP Nanowires
Dan Dalacu, Khaled Mnaymneh, J. Lapointe +5
Статья2012Цитирований: 2
ABI
Coherent Growth of InP/InAsP/InP Nanowires on a Si (111) Surface by Molecular-Beam Epitaxy
R. R. Reznik, G. É. Cirlin, I. V. Shtrom +5
Статья2018Цитирований: 2
ABI
Formation, electronic structure, and optical properties of self-assembled quantum-dot single-photon emitters in Ga(N,As,P) nanowires
Mattias Jansson, Luca Francaviglia, Rui La +3
Статья2020Цитирований: 2
ABI
Growth of nanowire superlattice structures for nanoscale photonics and electronics
Mark S. Gudiksen, Lincoln J. Lauhon, Jianfang Wang +2
Статья2002Цитирований: 2
ABI
An Emphasis of Electron Energy Calculation in Quantum Wells
Gao Shao-Wen, Cao Jun-Cheng, Songlin Feng
Статья2004Цитирований: 2
ABI
The electronic properties of a coaxial square GaAs/Al Ga1−As quantum well wire in an electric field
Ş. Aktaş, F.K. Boz, A. Bilekkaya +1
Статья2009Цитирований: 2
ABI
Numerical simulation of coupling effect on electronic states in quantum wires
A. Bouazra, S. Abdi-Ben Nasrallah, A. Poncet +2
Статья2009Цитирований: 2
ABI
Electron states in rectangular quantum well wires (single wires, finite and infinite lattices)
E. P. Pokatilov, V. A. Fonoberov, S. N. Balaban +1
Статья2000Цитирований: 2
ABI
Room-Temperature Near-Infrared Photodetectors Based on Single Heterojunction Nanowires
Liang Ma, Wei Hu, Qinglin Zhang +10
Статья2014Цитирований: 2
ABI
Chemical vapor deposition and electrical characterization of sub-10nm diameter InSb nanowires and field-effect transistors
Rajat Kanti Paul, Miroslav Penchev, Jiebin Zhong +5
Статья2010Цитирований: 2
ABI