Работы, цитирующие эту работу

Работ: 2

Работа: Temperature Measurement of a Nanowire SOI Transistor Using a Parallel Gated SOI PIN Diode

1. Mathematical Modeling of Incomplete Ionization in Radial p-Si/n-GaAs Heterojunctions: Temperature and Doping Effects

   Jo`shqin Abdullayev, I. B. Sapaev, Jonibek Sh. Abdullayev +3

   СтатьяSemiconductor materials and interfacesJournal of Electronic Materials2025Цитирований: 2

   ABIABI:AkademIndex/openalex/2025.article.001352

2. Impact of incomplete ionization on the critical electric field of <i>p</i> - <i>n</i> junction structures based on Si and GaAs

   J. Sh. Abdullayev, Dildora Qalandarova, M. Sh. Ibragimova

   СтатьяSilicon and Solar Cell TechnologiesLow Temperature Physics2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.003469