Работы, цитирующие эту работу

Работ: 3

Работа: Precipitation of Cu and Ni in n- and p-type Czochralski-grown silicon characterized by photoluminescence imaging

1. Decay of Impurity Clusters of Nickel and Cobalt Atoms in Silicon under the Influence of Pressure

   N. A. Turgunov, Elmurod Kh. Berkinov, D. Kh. Mamajonova

   СтатьяSilicon and Solar Cell TechnologiesJournal of Nano- and Electronic Physics2021Цитирований: 8

   ABIABI:AkademIndex/openalex/2026.other.279523

2. The Effect of Thermal Annealing on the Electrophysical Properties of Samples n-Si<Ni,Сu>

   N. A. Turgunov, Elmurod Kh. Berkinov, R.M. Turmanova

   СтатьяSilicon and Solar Cell TechnologiesEast European Journal of Physics2023Цитирований: 8

   ABIABI:AkademIndex/openalex/2026.other.279528

3. Influence of Accumulation of Impurity Atoms Ni and Fe on the Electrophysical Properties of Si Single Crystals

   N. A. Turgunov, Sh. K. Akbarov, N. B. Khaytimmetov +1

   СтатьяSemiconductor materials and interfacesJournal of Nano- and Electronic Physics2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.003369