Работы, цитирующие эту работу

Работ: 3

Работа: HgCdTe-MISFET fabrication with multi-step surface passivation and quantum effects

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   ABIABI:AkademIndex/openalex/2026.other.104967

2. Effect of implantation of active metal ions on the elemental and chemical compositions of the CdTe surface

   Z. E. Mukhtarov, З. А. Исаханов, Б. Е. Умирзаков +2

   СтатьяAdvanced Semiconductor Detectors and MaterialsTechnical Physics2015Цитирований: 6

   ABIABI:AkademIndex/openalex/2026.other.104959

3. Analyzing the Change in the Composition of a CdTe Surface upon Implanting $$O_{2}^{ + }$$ Ions and Subsequent Annealing

   A. A. Abduvayitov, Kh. Kh. Boltaev, Б. Е. Умирзаков +2

   СтатьяAdvanced Semiconductor Detectors and MaterialsBulletin of the Russian Academy of Sciences Physics2024Цитирований: 1

   ABIABI:AkademIndex/openalex/2024.article.003936