Работы, цитирующие эту работу

Работ: 4

Работа: A modified forward <i>I</i>-<i>V</i> plot for Schottky diodes with high series resistance

1. Electrical properties of Schottky diodes using high-resistivity CdTe crystals

   V. O. Ukrainets, Г. А. Ильчук, N. A. Ukrainets +2

   СтатьяAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters1999Цитирований: 0

   ABIABI:AkademIndex/openalex/1999.article.000150

2. Fabrication of photodiodes based on graphene oxide (GO) doped lanthanum hexaboride (LaB6) nanocomposites

   Mesut Yalçın, Abdullah G. Al‐Sehemi, İbrahi̇m Erol +5

   СтатьяElectronic and Structural Properties of OxidesDiamond and Related Materials2023Цитирований: 0

   ABIABI:AkademIndex/openalex/2023.article.001254

3. Tuning barrier height and enhancing electrical properties of MOS heterojunctions using Fe2O3 doped MoO3 nanocomposite interlayer on Ni/Cr/n-GaN for optoelectronic devices

   Karri Aswini, Chaitanya Kumar Kunapalli, K. Munirathnam +7

   СтатьяSemiconductor materials and interfacesPhysica B Condensed Matter2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.001641

4. Temperature-dependent dark I–V transport and barrier inhomogeneity in VTE-grown CdTe/Si heterojunction

   I.B. Sapaev, S.O. Sadullaev, Kh. N. Juraev +4

   СтатьяSemiconductor materials and interfacesResults in Physics2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.006836