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Работы, цитирующие эту работу

Работ: 6

Работа: Mechanism of charge transfer in injection photodiodes based on the In-n +-CdS-n-CdS x Te1 − x -p-Zn x Cd1 − x Te-Mo structure

  1. Effect of temperature on the current transfer mechanism in the reverse I–V characteristics of the <i>n</i>-CdS/<i>i</i>-CdS<sub><i>x</i></sub>Te1−x/<i>p</i>-CdTe heterostructure

    А.С. Ачилов, R. R. Kabulov, Sharifa B. Utamuradova +1

    СтатьяChalcogenide Semiconductor Thin FilmsModern Physics Letters B2023Цитирований: 4
    ABI

  2. Charge Transport Mechanism in p--Si--n--(Si2)1--x(CdS)x Semiconductor Structures

    S.Z. Zaynabidinov, Kh. M. Madaminov

    СтатьяIndustrial Engineering and TechnologiesHerald of the Bauman Moscow State Technical University Series Natural Sciences2020Цитирований: 2
    ABI

  3. Effect of Solar Radiation of Different Power on the Internal Amplification of the Primary Photocurrent in Heterostructures Based on Cadmium Telluride

    R. R. Kabulov, S. Yu. Gerasimenko, F. A. Akbarov

    СтатьяAdvanced Semiconductor Detectors and MaterialsApplied Solar Energy2023Цитирований: 2
    ABI

  4. Morphology and Current Transport in a Thin-Film Polycrystalline Au–ZnxCd1–xS–Mo Structure with Wide Photosensitivity Range in the Ultraviolet and Visible Radiation Spectral Region

    R. R. Kobulov, M. A. Makhmudov, S. Yu. Gerasimenko +1

    СтатьяChalcogenide Semiconductor Thin FilmsApplied Solar Energy2018Цитирований: 2
    ABI

  5. Features of a ZnxCd1 – xS Buffer Layer for Use in Thin-Film Solar Cells in the Context of a Literature Review

    R. R. Kabulov

    Обзорная статьяChalcogenide Semiconductor Thin FilmsApplied Solar Energy2020Цитирований: 1
    ABI

  6. The Mechanism of Current Transfer in n-GaAs – p(ZnSe)1-x-y(Ge2)x(GaAs1–δBiδ)y Heterostructures

    С. З. Зайнабидинов, Khotamjon J. Mansurov, Akramjon Y. Boboev +1

    СтатьяSemiconductor materials and interfacesEast European Journal of Physics2024Цитирований: 0
    ABI