Работы, цитирующие эту работу

Работ: 3

Работа: Large random telegraph noise in sub-threshold operation of nano-scale nMOSFETs

1. The Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes

   A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +1

   СтатьяAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters2021Цитирований: 5

   ABIABI:AkademIndex/openalex/2021.article.000827

2. Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET

   A. É. Atamuratov, M. M. Khalilloev, Ahmed Yusupov +3

   СтатьяSemiconductor materials and devicesApplied Sciences2020Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.541488

3. Simulation of Random Telegraph Noise in Nanometer nMOSFET Induced by Interface and Oxide Trapped Charge

   A. É. Atamuratov, R. Granzner, M. Kittler +3

   ГлаваSemiconductor materials and devicesNATO science for peace and security series. B, Physics and biophysics2013Цитирований: 0

   ABIABI:AkademIndex/openalex/2013.chapter.000013