Работы, цитирующие эту работу

Работ: 2

Работа: Formation and Schottky behavior of manganese silicides on <i>n</i>-type silicon

1. On the growth of higher manganese silicide films on silicon

   Andrey Orekhov, T. S. Kamilov, Abdumalik Gaibov +2

   СтатьяSemiconductor materials and interfacesTechnical Physics2010Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.199251

2. Study of the temperature dependence of the electrophysical and crystal structure of a thin coating of manganese silicide

   B.D. Igamov, A.I. Kamardin, I.R. Bekpulatov +1

   СтатьяSemiconductor materials and interfacesMaterials Today Communications2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.000612