Работы, цитирующие эту работу

Работ: 3

Работа: About the mechanism of formation and growth of the higher manganese silicide films on silicon

1. Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M photodiodes

   Д. М. Шукурова, Andrey Orekhov, B. Z. Sharipov +2

   СтатьяSemiconductor materials and interfacesTechnical Physics2011Цитирований: 4

   ABIABI:AkademIndex/openalex/2011.article.000139

2. On the growth of higher manganese silicide films on silicon

   Andrey Orekhov, T. S. Kamilov, Abdumalik Gaibov +2

   СтатьяSemiconductor materials and interfacesTechnical Physics2010Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.199251

3. About the Interface Between the Higher Manganese Silicide Film and Si (111)

   T. S. Kamilov, D.K. Kabilov, S.Kh. Babadjanov +5

   СтатьяSemiconductor materials and interfaces2006Цитирований: 0

   ABIABI:AkademIndex/openalex/2006.article.000312