Работы, цитирующие эту работу

Работ: 3

Работа: Performance estimation of junctionless multigate transistors

1. Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate

   A. É. Atamuratov, M. M. Khalilloev, A.E. Abdikarimov +4

   СтатьяAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics2017Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.541483

2. Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET

   A. É. Atamuratov, M. M. Khalilloev, Ahmed Yusupov +3

   СтатьяSemiconductor materials and devicesApplied Sciences2020Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.541488

3. Influence of the Gate Oxide and Back Oxide Material Types on Self-heating Effect in Junctionless FinFET

   A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2

   СтатьяSemiconductor materials and devices2024Цитирований: 1

   ABIABI:AkademIndex/openalex/2024.article.001950