Работы, цитирующие эту работу

Работ: 4

Работа: Growth of Ge1 − x Sn x solid solution films and study of their structural properties and some of their photoelectric properties

1. Liquid-phase epitaxy of the (Si2)1 − x − y (Ge2) x (GaAs) y substitutional solid solution (0 ≤ x ≤ 0.91, 0 ≤ y ≤ 0.94) and their electrophysical properties

   А. С. Саидов, Sh. N. Usmonov, М. С. Саидов

   СтатьяSilicon Nanostructures and PhotoluminescenceSemiconductors2015Цитирований: 3

   ABIABI:AkademIndex/openalex/2026.other.373288

2. Effect of Diatomic Silicon Molecular Impurities on the Luminescent Properties of Semiconductor Solid Solutions

   А. С. Саидов, Sh. N. Usmonov, D. V. Saparov +1

   СтатьяSilicon Nanostructures and PhotoluminescenceApplied Solar Energy2020Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.388019

3. Structural Features of the Epitaxial Layer of the (GaAs)<sub>1−</sub><i><sub>y</sub></i><sub>−</sub><i><sub>z</sub></i>(Ge<sub>2</sub>)<i><sub>y</sub></i>(ZnSe)<i><sub>z</sub></i> Solid Solution Grown from a Bismuth Solution Melt

   А. С. Саидов, M. U. Kalanov, D. V. Saparov +4

   СтатьяSemiconductor materials and interfacese-Journal of Surface Science and Nanotechnology2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.005519

4. Regarding Spectrum Photosensitivity and Certain GaAs’s Structural Properties Heterostructures, Namely (GaAs)_1-x-y(Ge2)_x(ZnSe)_y

   Shavkat Ismailov, D. V. Saparov, А. С. Саидов +2

   СтатьяPhase-change materials and chalcogenides2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.007623