Работы, цитирующие эту работу

Работ: 2

Работа: Resistivity of Bulk Silicon and of Diffused Layers in Silicon

1. The Elemental Composition Investigation of Silicon Doped with Gallium and Antimony Atoms

   Х. М. Илиев, S. Koveshnikov, B. O. Isakov +3

   СтатьяSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry2024Цитирований: 2

   ABIABI:AkademIndex/openalex/2024.article.002753

2. Effect of anodic etching of heavily doped silicon on the location of the plasma minimum

   V. B. Shuman

   СтатьяSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters1999Цитирований: 0

   ABIABI:AkademIndex/openalex/1999.article.000192