Работы, цитирующие эту работу

Работ: 5

Работа: THE THEORY OF X-RAY SCATTERING

1. Growth of (InSb)1 − x (Sn2) x films on GaAs substrates by liquid-phase epitaxy

   А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +1

   СтатьяSemiconductor Quantum Structures and DevicesSemiconductors2010Цитирований: 9

   ABIABI:AkademIndex/openalex/2026.other.262319

2. Growth of Ge1 − x Sn x solid solution films and study of their structural properties and some of their photoelectric properties

   А. С. Саидов, Sh. N. Usmonov, U. P. Asatova

   СтатьяPhotonic and Optical DevicesSemiconductors2012Цитирований: 4

   ABIABI:AkademIndex/openalex/2026.other.506192

3. Structure and photoelectric properties of Si1 − x Sn x epilayers

   А. С. Саидов, Sh. N. Usmonov, M. U. Kalanov +1

   СтатьяSemiconductor materials and interfacesTechnical Physics Letters2010Цитирований: 3

   ABIABI:AkademIndex/openalex/2026.other.534933

4. Separate determination of the amplitude of thermal vibrations and static atomic displacements in titanium carbide by neutron diffraction

   I. Khidirov, A. S. Parpiev

   СтатьяX-ray Diffraction in CrystallographyCrystallography Reports2011Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.612830

5. Neutron diffraction study of the formation of ordered antiphase domains in cubic titanium carbide TiC0.60

   I. Khidirov, A. S. Parpiev

   СтатьяAdvanced materials and compositesCrystallography Reports2013Цитирований: 1

   ABIABI:AkademIndex/openalex/2013.article.000257