Работы, цитирующие эту работу

Работ: 3

Работа: Growth of MnSi1.7 on Si(001) by MBE

1. Electron microscopy characterization of higher manganese silicide film structure on silicon

   Andrey Orekhov, T. S. Kamilov, Anton S. Orekhov +3

   СтатьяSemiconductor materials and interfacesNanotechnologies in Russia2016Цитирований: 7

   ABIABI:AkademIndex/openalex/2026.other.079735

2. About the mechanism of formation and growth of the higher manganese silicide films on silicon

   T. S. Kamilov, D.K. Kabilov, I.S. Samiev +6

   СтатьяSemiconductor materials and interfaces2005Цитирований: 3

   ABIABI:AkademIndex/openalex/2026.other.424565

3. Growth technique and structural properties of the higher manganese silicide films

   T. S. Kamilov, D.K. Kabilov, I.S. Samiev +3

   СтатьяSemiconductor materials and interfaces2005Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.609626