Работы, цитирующие эту работу

Работ: 4

Работа: Analysis of structural defects in the CdSe x S1 – x nanocrystals

1. Effect of the Disordering of Thin Surface Layers on the Electronic and Optical Properties of Si(111)

   Б. Е. Умирзаков, Д. А. Ташмухамедова, A. K. Tashatov +2

   СтатьяSemiconductor materials and interfacesSemiconductors2020Цитирований: 4

   ABIABI:AkademIndex/openalex/2026.other.402217

2. Effect of Ion Bombardment on the Density of States of Valence Electrons in CdS Films

   Б. Е. Умирзаков, Д. А. Ташмухамедова, Eshboy Rabbimov +2

   СтатьяChalcogenide Semiconductor Thin FilmsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2019Цитирований: 3

   ABIABI:AkademIndex/openalex/2019.article.000688

3. Distribution of Molybdenum Atoms over Depth of the Surface Layer of a Niobium Single Crystal Produced by Ion Bombardment

   Y. S. Ergashov, S. B. Donaev

   СтатьяIon-surface interactions and analysisJournal of Nano- and Electronic Physics2022Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.095304

4. Study of the Composition of Uncontrolled Impurities and the Profiles of Their Distribution at the Ni–CdS Interface

   A. A. Abduvayitov, Kh. Kh. Boltaev, G. A. Rozikov

   СтатьяChalcogenide Semiconductor Thin FilmsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2022Цитирований: 0

   ABIABI:AkademIndex/openalex/2022.article.008003