High-dose Al-implanted 4H-SiC p+-n-n+ junctions
E. V. KalininaIoffe Institute, St. Petersburg, 194021 RussiaG. KholujanovIoffe Institute, St. Petersburg, 194021 RussiaВ. Н. СоловьевIoffe Institute, St. Petersburg, 194021 RussiaAnatoly M. Strel’chukIoffe Institute, St. Petersburg, 194021 RussiaA. S. ZubrilovIoffe Institute, St. Petersburg, 194021 RussiaV. KossovElectron Optronic, St. Petersburg, 194223, RussiaR. R. YafaevElectron Optronic, St. Petersburg, 194223, RussiaAlexei P. KovarskiMekhanobr-Analyt” Centre, St. Petersburg, 199026, RussiaAnders HallénRoyal Institute of Technology, Department of Electronics, Electrum 229, SE 164 40 Kista, SwedenAndrey O. KonstantinovAcreo, Electrum 233, SE 164 40 Kista, SwedenStefan KarlssonAcreo, Electrum 233, SE 164 40 Kista, SwedenC. AdåsAcreo, Electrum 233, SE 164 40 Kista, SwedenS. RendakovaTDI, Inc., Gaithersburg, Maryland 20877V. DmitrievTDI, Inc., Gaithersburg, Maryland 20877
2000en
ABI
Аннотация
p + -n-n + junctions were fabricated by ion implantation with Al of low-doped epitaxial n layers of 4H-SiC grown by chemical vapor deposition on commercial 4H-SiC wafers both with and without reduction of micropipe densities. It was shown that, using high levels of Al ion doping (5×1016 cm−2) in combination with rapid thermal anneal, single-crystal p+-4H-SiC layers can be obtained. These layers do not form barriers at the contact metal–semiconductor interface and do not introduce additional resistance into structures with p+-n junctions. This significantly reduces the forward voltage drop across the structure in a wide range of current densities up to 104 A cm−2.
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