Работы, цитирующие эту работу

Работ: 4

Работа: High-dose Al-implanted 4H-SiC p+-n-n+ junctions

1. Gettering Effect with Al Implanted into 4H-SiC CVD Epitaxial Layers

   Evgenia V. Kalinina, G. Kholuyanov, A. А. Ситникова +6

   СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2003Цитирований: 1

   ABIABI:AkademIndex/openalex/2003.article.000128

2. Electrical Study of Fast Neutron Irradiated Devices Based on 4H-SiC CVD Epitaxial Layers

   Evgenia V. Kalinina, G. Kholuyanov, Anatoly M. Strel’chuk +4

   СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2004Цитирований: 0

   ABIABI:AkademIndex/openalex/2004.article.000109

3. Comparative Study of 4H-SiC Irradiated with Neutrons and Heavy Ions

   Evgenia V. Kalinina, G. Kholuyanov, Grigory Onushkin +6

   СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2005Цитирований: 0

   ABIABI:AkademIndex/openalex/2005.article.000233

4. 4H-SiC High Temperature Spectrometers

   Evgenia V. Kalinina, N. B. Strokan, Alexander M. Ivanov +5

   СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2007Цитирований: 0

   ABIABI:AkademIndex/openalex/2007.article.000197