Работы, цитирующие эту работу

Работ: 3

Работа: Surface barrier detectors using aluminum on n- and p-type silicon for α-spectroscopy

1. Effect of the Ge content on the Schottky barrier height in structures based on Si1 − x Ge x solid solution

   N. A. Matchanov

   СтатьяSemiconductor materials and interfacesTechnical Physics2008Цитирований: 0

   ABIABI:AkademIndex/openalex/2008.article.000326

2. Effect of different chemical treatments of surface on the height of Al-p-SiGe and Au-n-SiGe barriers

   I. G. Atabaev, N. A. Matchanov, M. U. Hajiev +2

   СтатьяSemiconductor materials and devicesSemiconductors2010Цитирований: 0

   ABIABI:AkademIndex/openalex/2010.article.000173

3. Effect of surface chemical treatments on Ti-p-Si1 − x Gex and Ni-p-Si1 − x Ge x contact properties

   I. G. Atabaev, M. U. Hajiev, N. A. Matchanov +2

   СтатьяSemiconductor materials and interfacesSemiconductors2010Цитирований: 0

   ABIABI:AkademIndex/openalex/2010.article.000362