Работы, цитирующие эту работу

Работ: 2

Работа: Performance optimization of nanoscale junctionless transistors through varying device design parameters for ultra-low power logic applications

1. The Influence of Fin Shape on the Amplitude of Random Telegraph Noise in the Subthreshold Regime of a Junctionless FinFET

   M. M. Khalilloev, B. O. Jabbarova, Aslan Nasirov

   СтатьяAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters2019Цитирований: 2

   ABIABI:AkademIndex/openalex/2019.article.000603

2. Amplitude of Random Telegraph Noise in Junctionless FinFET with Different Channel Shape

   A. É. Atamuratov, M. M. Khalilloev, Ahmed Yusupov +2

   СтатьяAdvancements in Semiconductor Devices and Circuit Designe-Journal of Surface Science and Nanotechnology2021Цитирований: 0

   ABIABI:AkademIndex/openalex/2021.article.004230