Работы, цитирующие эту работу

Работ: 2

Работа: Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

1. Effect of the band-tail states on the exciton peaks in GaN epilayers grown on sapphire substrates

   Tae Won Kang, Sh. U. Yuldashev, Igor L. Bolotin +5

   СтатьяGaN-based semiconductor devices and materialsJournal of Applied Physics2000Цитирований: 1

   ABIABI:AkademIndex/openalex/2000.article.000087

2. Investigation of the growth characteristics of epitaxial GaN layers on sapphire by microcathodoluminescence

   A. S. Usikov, V. V. Tret’yakov, W. V. Lundin +3

   СтатьяGaN-based semiconductor devices and materialsTechnical Physics Letters1999Цитирований: 0

   ABIABI:AkademIndex/openalex/1999.article.000218