Работы, цитирующие эту работу

Работ: 3

Работа: Preparation of nonequilibrium solid solutions of (GaAs)1−<i>x</i>Si<i>x</i>

1. Low-temperature crystallization of semiconductor solid solutions that are promising for the realization of the extrinsic thermophotovoltaic effect

   М. С. Саидов

   СтатьяAdvanced Semiconductor Detectors and MaterialsApplied Solar Energy2007Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.504675

2. Possibility of forming continuous solid solutions of silicon and germanium with compounds with defective diamond-like structures

   М. С. Саидов

   СтатьяIon-surface interactions and analysisApplied Solar Energy2008Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.625503

3. Synthesis and properties of Ge-(Ge2)1−x(GaAs)x (0≤x≤1.0) epitaxial heterostructures grown by LPE from lead-based solution melts

   Б. Сапаев

   СтатьяSemiconductor materials and interfacesTechnical Physics Letters2004Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.386210