Работы, цитирующие эту работу

Работ: 2

Работа: Oxide thickness dependence of electron-induced surface states in MOS structures

1. The effect of γ-ray radiation on the characteristics of the interface between silicon and lead-borosilicate glass

   П. Б. Парчинский, С. И. Власов, Aslan Nasirov

   СтатьяGlass properties and applicationsSemiconductors2004Цитирований: 1

   ABIABI:AkademIndex/openalex/2004.article.000159

2. Density of states at a gamma-irradiated Si/SiO2 interface: The effect of ultrasonic treatment

   П. Б. Парчинский

   СтатьяIon-surface interactions and analysisRussian Microelectronics2005Цитирований: 0

   ABIABI:AkademIndex/openalex/2005.article.000246