Работы, цитирующие эту работу

Работ: 2

Работа: Influence of the field of the built-in oxide charge on the lateral C- V dependence of the MOSFET

1. Characterising lateral capacitance of MNOSFET with localised trapped charge in nitride layer

   A. É. Atamuratov, Zamira Atamuratova, А. Yusupov +1

   СтатьяSemiconductor materials and devicesResults in Physics2018Цитирований: 3

   ABIABI:AkademIndex/openalex/2026.other.570280

2. Capacitance-Voltage Method for Detecting the local oxide trapped charge in SOI FinFET

   A.E. Abdikarimov, Mirzabahrom Foziljonov, И. Н. Каримов

   СтатьяSemiconductor materials and devices2022Цитирований: 0

   ABIABI:AkademIndex/openalex/2022.article.011220