Работы, цитирующие эту работу

Работ: 2

Работа: Observation of 4H–SiC to 3C–SiC polytypic transformation during oxidation

1. Electroluminescence of p-3C-SiC/n-6H-SiC Heterodiodes, Grown by Sublimation Epitaxy in Vacuum

   A. А. Lebedev, Anatoly M. Strel’chuk, Alexey N. Kuznetsov +1

   СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2004Цитирований: 0

   ABIABI:AkademIndex/openalex/2004.article.000211

2. 6H(n<sup>+</sup>)/3C(n)/6H(p<sup>+</sup>) - SiC Structures Grown by Sublimation Epitaxy

   Anatoly M. Strel’chuk, A. А. Lebedev, A. E. Cherenkov +6

   СтатьяSilicon Carbide Semiconductor TechnologiesDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena2005Цитирований: 0

   ABIABI:AkademIndex/openalex/2005.article.000230