Работы, цитирующие эту работу

Работ: 3

Работа: Heterostructure Lasers

1. Photophysical characteristics of microlayer photodiode pAlGaInAs(Zn)-nGaAs-Au structures

   D. M. Edgorova, F. M. Ashrapov

   СтатьяSemiconductor Quantum Structures and DevicesJournal of Engineering Physics and Thermophysics2007Цитирований: 1

   ABIABI:AkademIndex/openalex/2007.article.000273

2. Emissive characteristics of mesa-stripe lasers (λ=3.0–3.6 μm) made from InGaAsSb/InAsSbP double heterostructures

   M. Aidaraliev, N. V. Zotova, S. A. Karandashev +4

   СтатьяSpectroscopy and Laser ApplicationsTechnical Physics Letters1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000255

3. Effect of substrate crystal on mechanical stresses in heteroepitaxial photo-conversion Ga x In1 − x P/GaP structures

   M. A. Abdukadyrov, A. S. Ganiev, I. O. Dzhumaniyazov +1

   СтатьяSemiconductor Quantum Structures and DevicesApplied Solar Energy2013Цитирований: 0

   ABIABI:AkademIndex/openalex/2013.article.000552