Работы, цитирующие эту работу

Работ: 6

Работа: The electrical properties of sulphur in silicon

1. An ionization-type Si:S-based semiconductor converter of infrared images with sensitivity in the spectral range of CO2-laser radiation

   V. T. Tulanov, Kh. B. Siyabekov, A.Sh. Davletova +1

   СтатьяLaser Design and ApplicationsSemiconductors2001Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.609364

2. Effect of the degree of compensation of sulfur impurity levels on the photoconductivity of silicon near 10.6 µm

   G. B. Gorlin, V. T. Tulanov, Kh. B. Siyabekov

   СтатьяSemiconductor materials and interfacesTechnical Physics1997Цитирований: 0

   ABIABI:AkademIndex/openalex/1997.article.000202

3. New Tight-Binding Method for Simulation of Defect Configurations, Creation and Diffusion Mechanisms in Solids: Application to Silicon

   Zokirkhon M. Khakimov

   СтатьяThin-Film Transistor TechnologiesMRS Proceedings1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000275

4. New Tight-Binding Method for Simulation of Defect Configurations, Creation and Diffusion Mechanisms in Solids: Application to Silicon

   Zokirkhon M. Khakimov

   СтатьяSilicon and Solar Cell TechnologiesMRS Proceedings1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000320

5. Method of Increasing Photosensitivity of Silicon Power Planes for Solar Energy

   Sh. I. Askarov, B. Z. Sharipov, Sh. K. Saliyeva +1

   СтатьяSolid-state spectroscopy and crystallographyApplied Solar Energy2018Цитирований: 0

   ABIABI:AkademIndex/openalex/2018.article.000969

6. Quasi-molecules of Sulphur in Silicon

   Shoikrom I. Askarov, Bashirulla B. Sharipov, Abdulaziz Sh. Mavlyanov +3

   СтатьяSemiconductor materials and interfaces2023Цитирований: 0

   ABIABI:AkademIndex/openalex/2023.article.012157