Работы, цитирующие эту работу

Работ: 3

Работа: Radiation-induced point- and cluster-related defects with strong impact on damage properties of silicon detectors

1. Effect of Dysprosium Atoms Introduced During the Growth Phase on the Formation of Radiation Defects in Silicon Crystals

   Kh.S. Daliev, Sharifa B. Utamuradova, Shakhrukh Kh. Daliev +2

   СтатьяSilicon and Solar Cell TechnologiesEast European Journal of Physics2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.009030

2. Impedance spectra of rhodium-doped silicon irradiated with alpha particles

   Sharifa B. Utamuradova, D.A. Rakhmanov, A.S. Doroshkevich +3

   СтатьяSilicon and Solar Cell TechnologiesRadiation Physics and Chemistry2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.010369

3. Raman Spectoroscopy of Silicon Single Crystals, Doped with Palladium and Irradiated by GammaRays

   Sharifa B. Utamuradova, Dilmurod A. Rakhmanov, A.S. Abiyev

   СтатьяSilicon and Solar Cell TechnologiesJournal of Ovonic Research2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.010786