A.N. Volkova

3 та иш

Ioffe Physicotechnical Institute RAS

1. Modification of the Silicon Carbide by Proton Irradiation

   Е. В. Богданова, Vitalii V. Kozlovski, D. S. Rumyantsev +2

   МақолаSilicon and Solar Cell TechnologiesMaterials science forum20040 иқтибос

   ABIABI:AkademIndex/openalex/2004.article.000214

2. On Current Limitations in Porous SiC Applications

   M. G. Mynbaeva, A. A. Lavrent’ev, I. S. Kotousova +3

   МақолаSilicon Nanostructures and PhotoluminescenceMaterials science forum20050 иқтибос

   ABIABI:AkademIndex/openalex/2005.article.000114

3. About the Nature of Recombination Current in 4H-SiC pn Structures

   Anatoly M. Strel’chuk, A.V. Mashichev, A. А. Lebedev +2

   МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20060 иқтибос

   ABIABI:AkademIndex/openalex/2006.article.000217