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Ga2O3 and related materials

72 та иш

  1. Metal–Insulator Transition Detection of Vanadium Dioxide Thin Films by Visible Light Reflection

    Bunyod Allabergenov, Sanghun Yun, Byeongdae Choi

    МақолаTransition Metal Oxide NanomaterialsACS Applied Materials & Interfaces20221 иқтибос
    ABI

  2. Effect of SiO<sub>2</sub> and Post-Annealed Ga<sub>2</sub>O<sub>3</sub> Buffer Layers on Ga<sub>2</sub>O<sub>3</sub> Thin Film Growth and Properties

    Noiba U. Botirova, Azamat O. Arslanov, Gofur B. Eshonkulov +4

    МақолаGa2O3 and related materialsCrystal Growth & Design20251 иқтибос
    ABI

  3. Twin-induced phase transition from β-Ga<sub>2</sub>O<sub>3</sub> to α-Ga<sub>2</sub>O<sub>3</sub> in Ga<sub>2</sub>O<sub>3</sub> thin films

    Byeongdae Choi, Bunyod Allabergenov, Hong‐Kun Lyu +1

    МақолаGa2O3 and related materialsApplied Physics Express20181 иқтибос
    ABI

  4. X-Ray Structural and Photoelectric Properties of SnO2, ZnO, and Zn2SnO4 Metal Oxide Films

    Khotamjon J. Mansurov, Akramjon Y. Boboev, Jakhongir A. Urinboyev

    МақолаZnO doping and propertiesEast European Journal of Physics20241 иқтибос
    ABI

  5. White Light Emission from ZnO/Zn<sub>0.9</sub>Mg<sub>0.1</sub>O Heterostructures Grown on Si Substrates

    Sh. U. Yuldashev, Р. А. Нусретов, I. V. Khvan +2

    МақолаZnO doping and propertiesJapanese Journal of Applied Physics20081 иқтибос
    ABI

  6. Cathode luminescence spectral studies of degassing and radiation stability of superconductor Y1Ba2Cu3O7–<i>δ</i>

    V. V. Eremenko, I. Ya. Fugol’, V. N. Samovarov +3

    МақолаPhysics of Superconductivity and MagnetismSoviet Journal of Low Temperature Physics19880 иқтибос
    ABI

  7. Rejoinder to the comment by B. J. Luff and P. D. Townsend on the paper “Cathode luminescence spectral studies of degassing and radiation stability of Y1Ba2Cu3O7–<i>δ</i>” [Fiz. Nizk. Temp. <u>14</u>, 485 (1988)]

    V. V. Eremenko, I. Ya. Fugol’, V. N. Samovarov

    МақолаGa2O3 and related materialsSoviet Journal of Low Temperature Physics19900 иқтибос
    ABI

  8. Characteristics of stimulated emission from an optically pumped GaN/AlGaN double heterostructure

    М. В. Максимов, A. V. Sakharov, W. V. Lundin +7

    МақолаGaN-based semiconductor devices and materialsTechnical Physics Letters19970 иқтибос
    ABI

  9. Optical and Structural Studies of Thick AlGaN Alloy Layers and AlGaN/GaN Heterostructures on Sapphire Substrates

    W. V. Lundin, A. S. Usikov, B. V. Pushnyĭ +11

    МақолаGaN-based semiconductor devices and materialsMaterials science forum19980 иқтибос
    ABI

  10. Lasing and Gain Mechanisms in AlGaN-GaN-Double Heterostructures: Correlation with Structural Properties

    J. Holst, M. Straßburg, N. N. Ledentsov +13

    МақолаGaN-based semiconductor devices and materialsMaterials science forum19980 иқтибос
    ABI

  11. Photoluminescence of n-GaN: Influence of chemical treatment of the surface using sulfide solutions

    Yu. V. Zhilyaev, M. E. Kompan, E. V. Konenkova +2

    МақолаGaN-based semiconductor devices and materialsTechnical Physics Letters19980 иқтибос
    ABI

  12. Lasing in the vertical direction in quantum-size InGaN/GaN multilayer heterostructures

    A. V. Sakharov, W. V. Lundin, V. A. Semenov +4

    МақолаGaN-based semiconductor devices and materialsTechnical Physics Letters19990 иқтибос
    ABI

  13. Annealing Effect on Passivated Deep Levels in GaN Epilayers

    Sh. U. Yuldashev, Tae Won Kang, Woon Hyung Jung +6

    МақолаGaN-based semiconductor devices and materialsJapanese Journal of Applied Physics20000 иқтибос
    ABI

  14. Electric Characteristics of 6H-SiC/GaN Isotype n-n Heterojunctions

    N.I. Kuznetsov, A. E. Nikolaev, Yu. Melnik +1

    МақолаGaN-based semiconductor devices and materialsMaterials science forum20000 иқтибос
    ABI

  15. GaN Grown by Hydride - Metal Organic Vapor Phase Epitaxy (H-MOVPE) on Lattice-Matched Oxide and Silicon Substrates

    Michael E. Mastro, O. Kryliouk, Todd Dann +4

    МақолаGaN-based semiconductor devices and materialsMaterials science forum20020 иқтибос
    ABI

  16. Influence of ion and laser treatment on composition, structure and properties of epitaxy GaF 2 films

    Д. А. Ташмухамедова

    МақолаInorganic Fluorides and Related Compounds20040 иқтибос
    ABI

  17. Luminescence of ZnO nanocrystals capped with an organic dye

    S. S. Kurbanov, Г. Н. Панин, T.W. Kim +1

    МақолаZnO doping and propertiesOptics Communications20070 иқтибос
    ABI

  18. Photovoltaic device on a single ZnO nanowire p–n homojunction

    Hak Dong Cho, Anvar Zakirov, Sh. U. Yuldashev +3

    МақолаZnO doping and propertiesNanotechnology20120 иқтибос
    ABI

  19. Gamma irradiation impact on electronic carrier transport in AlGaN/GaN high electron mobility transistors

    Casey M. Schwarz, Anupama Yadav, M. Shatkhin +10

    МақолаGaN-based semiconductor devices and materialsApplied Physics Letters20130 иқтибос
    ABI

  20. Photoluminescence from porous textured ZnO films grown by chemical bath deposition

    S. S. Kurbanov, H. C. Jeon, Z. Sh. Shaymardanov +2

    МақолаZnO doping and propertiesJournal of Luminescence20150 иқтибос
    ABI

  21. Effective control over near band-edge emission in ZnO/CuO multilayered films

    Bunyod Allabergenov, Ulugbek Shaislamov, Hyunseok Shim +3

    МақолаZnO doping and propertiesOptical Materials Express20170 иқтибос
    ABI

  22. Effect of Surface Symmetry on the Dissociative Adsorption of Water on Gallium Oxynitride

    G. R. Berdiyorov, Ahsanulhaq Qurashi, G. Eshonqulov +1

    МақолаSemiconductor materials and devicesThe Journal of Physical Chemistry C20170 иқтибос
    ABI

  23. Atomic Layer Deposition of Ultra-Thin Oxide Semiconductors: Challenges and Opportunities

    Serge Zhuiykov, Zhenyin Hai, Eugene Kats +2

    МақолаSemiconductor materials and devicesKey engineering materials20170 иқтибос
    ABI

  24. Influence of the Sc cation substituent on the structural properties and energy transfer processes in GAGG:Ce crystals

    D. Spassky, Н. С. Козлова, Е. В. Забелина +9

    МақолаLuminescence Properties of Advanced MaterialsCrystEngComm20200 иқтибос
    ABI

  25. Размерное квантование в n-GaP

    B.P. Расулов, Р.Я. Расулов, И.М. Эшболтаев +1

    МақолаGaN-based semiconductor devices and materialsФизика и техника полупроводников20200 иқтибос
    ABI