Ушбу иш иқтибос қилган ишлар

4 та иш

Иш: Characterization of 3C-SiC/6H-SiC Heterostructures Grown by Vacuum Sublimation

1. Characterization of p–n structures grown by sublimation heteroepitaxy of 3C-SiC on 6H-SiC

   Anatoly M. Strel’chuk, N.S. Savkina, Alexey N. Kuznetsov +2

   Мақола20023 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.413671

2. Electrical characteristics of p-3C–SiC/n-6H–SiC heterojunctions grown by sublimation epitaxy on 6H–SiC substrates

   A. А. Lebedev, Anatoly M. Strel’chuk, Denis Davydov +5

   Мақола20013 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.413673

3. Characterization of 3C-SiC epilayers grown on 6H-SiC substrates by vacuum sublimation

   N.S. Savkina, A. S. Tregubova, M. P. Scheglov +3

   Мақола20022 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.413670

4. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.606383