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Иш: Temperature Dependence of the Band-Edge Injection Electroluminescence of 4H-SiC pn Structure

  1. Properties of advanced semiconductor materials : GaN, AlN, InN, BN, SiC, SiGe

    M. E. Levinshteĭn, Sergey Rumyantsev, M. S. Shur

    Китоб20012 иқтибос
    ABI

  2. Fabrication of 6H-SiC light-emitting diodes by a rotation dipping technique: Electroluminescence mechanisms

    M. Ikeda, Tomokatsu Hayakawa, Shin-ichi Yamagiwa +2

    Мақола19792 иқтибос
    ABI

  3. High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC Substrate

    Anatoly M. Strel’chuk, A. А. Lebedev, Alexey N. Kuznetsov +2

    МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20042 иқтибос
    ABI

  4. Influence of Gamma-Ray and Neutron Irradiation on Injection Characteristics of 4H-SiC pn Structures

    Anatoly M. Strel’chuk, Evgenia V. Kalinina, Andrey O. Konstantinov +1

    МақолаSilicon and Solar Cell TechnologiesMaterials science forum20052 иқтибос
    ABI

  5. Temperature coefficient of the energy gap of β-silicon carbide

    Richard Dalven

    Мақола19652 иқтибос
    ABI

  6. Free exciton luminescence in 3C, 4H, 6H, and 15R SiC

    M. Ikeda, H. Matsunami

    Мақола19802 иқтибос
    ABI

  7. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  8. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  9. Temperature Dependence of the Band-Edge Injection Electroluminescence of 3C-SiC pn Structure

    Anatoly M. Strel’chuk, A. А. Lebedev, N.S. Savkina +1

    МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20071 иқтибос
    ABI