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Ушбу иш иқтибос қилган ишлар

15 та иш

Иш: Influence of the ultrasonic irradiation on characteristic of the structures metal-glass-semiconductor

  1. Magnetic Quantum Effects in Electronic Semiconductors at Microwave-radiation Absorption

    G. Gulyamov, У. И. Эркабоев, A. G. Gulyamov

    Мақола201912 иқтибос
    ABI

  2. On the tensosensitivity of a p-n junction under illumination

    G. Gulyamov, A. G. Gulyamov

    МақолаOptical Polarization and EllipsometrySemiconductors201510 иқтибос
    ABI

  3. Ultrasonic annealing of surface states in the heterojunction of a p-Si/n-CdS/n +-CdS injection photodiode

    Ш. А. Мирсагатов, I. B. Sapaev, Zh. T. Nazarov

    МақолаThermography and Photoacoustic TechniquesInorganic Materials20149 иқтибос
    ABI

  4. Influence of temperature on the oscillations of longitudinal magnetoresistance in semiconductors with a nonparabolic dispersion law

    G. Gulyamov, У. И. Эркабоев, A. G. Gulyamov

    МақолаQuantum and electron transport phenomenaIndian Journal of Physics20189 иқтибос
    ABI

  5. Fabrication and Properties of nSi–pCdTe Heterojunctions

    I.B. Sapaev, Ш. А. Мирсагатов, Б. Сапаев +1

    МақолаChalcogenide Semiconductor Thin FilmsInorganic Materials20208 иқтибос
    ABI

  6. Properties of Passivating Coatings Based on Lead Borosilicate Glass

    П. Б. Парчинский, С. И. Власов, U. T. Turgunov

    МақолаGlass properties and applicationsInorganic Materials20026 иқтибос
    ABI

  7. Influence of Pressure on the Temperature Dependence of Quantum Oscillation Phenomena in Semiconductors

    G. Gulyamov, У. И. Эркабоев, A. G. Gulyamov

    МақолаSemiconductor Quantum Structures and DevicesAdvances in Condensed Matter Physics20176 иқтибос
    ABI

  8. Current-voltage characteristic of the injection photodetector based on In–n-CdS–p-Si–In structure

    I. B. Sapaev

    МақолаChalcogenide Semiconductor Thin FilmsSemiconductor Physics Quantum Electronics & Optoelectronics20195 иқтибос
    ABI

  9. Structure and transport properties of the spark plasma sintered barium cerate based proton conductor

    Sergii A. Sergiienko, V.A. Kolotygin, Nataliya Shcherban +5

    Мақола20175 иқтибос
    ABI

  10. The nonideality coefficient of current-voltage characteristics for p-n junctions in a high ultrahigh-frequency (microwave) field

    S. H. Shamirzaev, G. Gulyamov, М. Г. Дадамирзаев +1

    МақолаSilicon and Solar Cell TechnologiesSemiconductors20095 иқтибос
    ABI

  11. Eddy currents appearing in a p-n junction in a high microwave field

    S. H. Shamirzaev, G. Gulyamov, М. Г. Дадамирзаев +1

    МақолаElectromagnetic Effects on MaterialsSemiconductors20115 иқтибос
    ABI

  12. The Effects of Void Ratio in Die Attach Layer on Optical and Thermal Performances of High Power Light Emitting Diode

    Luqiao Yin, Jinlong Zhang, Peng Song +3

    Мақола20144 иқтибос
    ABI

  13. Thermal Stimulation of Photocurrent in p–n Junctions

    G. Gulyamov, A. G. Gulyamov, У. И. Эркабоев

    МақолаSemiconductor materials and interfacesApplied Solar Energy20182 иқтибос
    ABI

  14. Effect of pressure on the properties of Al-SiO2-n-Si<Ni> structures

    С. И. Власов

    Мақола20122 иқтибос
    ABI

  15. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI