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Ушбу иш иқтибос қилган ишлар

16 та иш

Иш: The Effect of Stepwise Postimplantation Annealing on the Composition and Structure of Silicon Surface Layers Implanted with Alkali Metal Ions

  1. Formation of nanodimensional structures on surfaces of GaAs and Si by means of ion implantation

    S. B. Donaev, Flyura Djurabekova, Д. А. Ташмухамедова +1

    МақолаIon-surface interactions and analysisPhysica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics201420 иқтибос
    ABI

  2. Optimum ion implantation and annealing conditions for stimulating secondary negative ion emission

    З. А. Исаханов, Z. E. Mukhtarov, Б. Е. Умирзаков +1

    МақолаIon-surface interactions and analysisTechnical Physics201119 иқтибос
    ABI

  3. Electronic structure and optical properties of CaF2 films under low energy Ba+ ion-implantation combined with annealing

    Б. Е. Умирзаков, T.S. Pugacheva, A.T. Tashatov +1

    МақолаInorganic Fluorides and Related CompoundsNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms200016 иқтибос
    ABI

  4. Structure and electronic properties of nanoscale phases and nanofilms of metal silicides produced by ion implantation in combination with annealing

    Kh. Kh. Boltaev, Д. А. Ташмухамедова, Б. Е. Умирзаков

    МақолаSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201414 иқтибос
    ABI

  5. Features of CoSi2 phase formation by two-stage rapid thermal annealing of Ti/Co/Ti/Si(100) structures

    V. I. Rudakov, Yu. I. Denisenko, В. В. Наумов +1

    Мақола20119 иқтибос
    ABI

  6. Molecular Beam Epitaxy and Heterostructures

    Leroy L. Chang, K. H. Ploog

    Китоб19859 иқтибос
    ABI

  7. Variation of the Crystal Structure on Si(111) Surface Induced by Ion Bombardment and Subsequent Annealing

    Samad Nimatov, Б. Е. Умирзаков, F. Ya. Khudaikulov +1

    МақолаIon-surface interactions and analysisTechnical Physics20198 иқтибос
    ABI

  8. The Effect of the Formation of Silicides on the Resistivity of Silicon

    Б. Е. Умирзаков, Д. А. Ташмухамедова, G. Kh. Allayarova +1

    МақолаSemiconductor materials and interfacesTechnical Physics Letters20195 иқтибос
    ABI

  9. Nanodimensional CoSiO Films Obtained by Ion Implantation on a CoSi2 Surface

    S. B. Donaev

    МақолаSemiconductor materials and devicesTechnical Physics Letters20204 иқтибос
    ABI

  10. Ion-beam-induced amorphization and recrystallization in silicon

    Lourdes Pelaz, Luis A. Marqués, J. Barbolla

    Мақола20043 иқтибос
    ABI

  11. Semiconductor lasers with internal wavelength selection

    V. V. Zolotarev, A. Yu. Leshko, A. V. Lyutetskiĭ +10

    Мақола20133 иқтибос
    ABI

  12. Theory of electronic structure evolution in GaAsN and GaPN alloys

    Paul R. C. Kent, Alex Zunger

    Мақола20013 иқтибос
    ABI

  13. Solar cell efficiency tables (version 49)

    Martin A. Green, Keith Emery, Yoshihiro Hishikawa +4

    Мақола20163 иқтибос
    ABI

  14. A Lightweight Flexible Solar Cell Based on a Heteroepitaxial InGaP/GaAs Structure

    М. А. Putyato, N. A. Valisheva, М. О. Петрушков +8

    Мақола20193 иқтибос
    ABI

  15. Electronic Structure of Single-Crystal CaF<sub>2</sub>(111) with Nanoscale Phases of Ca and Si

    Yokub Suvonovich Ergahov, B. Umirzakov, Gulmira Khalmuratovna Allayarova

    Мақолаnanoparticles nucleation surface interactionsMaterials Sciences and Applications20181 иқтибос
    ABI

  16. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI