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Ушбу иш иқтибос қилган ишлар

9 та иш

Иш: Structure, Morphology and Photoelectric Properties of n-GaAs--p-(GaAs)1--x(Ge2)х Heterostructure

  1. X-ray diffraction diagnostics methods as applied to highly doped semiconductor single crystals

    I. L. Shul’pina, R. N. Kyutt, В. В. Ратников +3

    Мақола20109 иқтибос
    ABI

  2. Growth, structure, and properties of GaAs-based (GaAs)1–x–y (Ge2) x (ZnSe) y epitaxial films

    S.Z. Zaynabidinov, А. С. Саидов, A. Yu. Leĭderman +4

    МақолаSemiconductor Quantum Structures and DevicesSemiconductors20165 иқтибос
    ABI

  3. Photosensitivity of pSi-n(Si2)1–x–y(Ge2) x (ZnSe) y heterostructures with quantum dots

    А. С. Саидов, Sh. N. Usmonov, K. A. Amonov +2

    МақолаSemiconductor materials and interfacesApplied Solar Energy20174 иқтибос
    ABI

  4. Sizes of X-ray radiation coherent domains in thin SmS films and their visualization

    Н. В. Шаренкова, В. В. Каминский, С. Н. Петров

    Мақола20114 иқтибос
    ABI

  5. Specific features of the epitaxial growth of narrow-gap InSb quantum dots on an InAs substrate

    K. D. Moiseev, Ya. A. Parkhomenko, Е. В. Гущина +4

    Мақола20094 иқтибос
    ABI

  6. Low-temperature crystallization of semiconductor solid solutions that are promising for the realization of the extrinsic thermophotovoltaic effect

    М. С. Саидов

    МақолаAdvanced Semiconductor Detectors and MaterialsApplied Solar Energy20072 иқтибос
    ABI

  7. Formation mechanisms of nano and microcones by laser radiation on surfaces of Si, Ge, and SiGe crystals

    Artur Medvid, Pāvels Onufrijevs, Renata Jarimaviciute-Gudaitiene +2

    Мақола20132 иқтибос
    ABI

  8. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  9. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI