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Ушбу иш иқтибос қилган ишлар

17 та иш

Иш: Capacitance Method for Identifying Degradation due to Electrical Stress in MOSFETs

  1. The Effect of the Fin Shape and Thickness of the Buried Oxide on the DIBL Effect in an SOI FinFET

    A.E. Abdikarimov, А. Yusupov, A. É. Atamuratov

    МақолаSemiconductor materials and devicesTechnical Physics Letters20186 иқтибос
    ABI

  2. Experimental Assessment of the Nonuniform Radiation-Induced Space-Charge Distribution in the Surface Region of Silicon

    A. É. Atamuratov, А. Yusupov, Khidir A. Adinaev

    МақолаAdvanced Energy Technologies and Civil Engineering InnovationsInorganic Materials20015 иқтибос
    ABI

  3. Charge storage in a nitride-oxide-silicon medium by scanning capacitance microscopy

    R. C. Barrett, C. F. Quate

    Мақола19915 иқтибос
    ABI

  4. Impact of Off-State Stress and Negative Bias Temperature Instability on Degradation of Nanoscale pMOSFET

    Nam-Hyun Lee, Hyung-wook Kim, Bongkoo Kang

    Мақола20114 иқтибос
    ABI

  5. Lateral Capacitance–Voltage Method of NanoMOSFET for Detecting the Hot Carrier Injection

    A. É. Atamuratov, Ahmed Yusupov, Zamira Atamuratova +2

    МақолаSemiconductor materials and devicesApplied Sciences20203 иқтибос
    ABI

  6. Method to predict length dependency of negative bias temperature instability degradation in p-MOSFETs

    Jihoon Seo, Gang-Jun Kim, Donghee Son +3

    Мақола20163 иқтибос
    ABI

  7. Effect of oxide-trapped charge on the anomalous drain avalanche hot carrier degradation of a SiO2 dielectric nMOSFET

    Yeohyeok Yun, Jihoon Seo, Young-Kyu Kwon +1

    Мақола20193 иқтибос
    ABI

  8. Characterising lateral capacitance of MNOSFET with localised trapped charge in nitride layer

    A. É. Atamuratov, Zamira Atamuratova, А. Yusupov +1

    МақолаSemiconductor materials and devicesResults in Physics20183 иқтибос
    ABI

  9. Anomalous Behavior of Lateral C–V Characteristic of an MNOS Transistor with an Embedded Local Charge in the Nitride Layer

    Zamira Atamuratova, А. Yusupov, B. O. Khalikberdiev +1

    МақолаSemiconductor materials and devicesTechnical Physics20193 иқтибос
    ABI

  10. An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes

    Lewis M. Terman

    Мақола19623 иқтибос
    ABI

  11. A propagation concept of negative bias temperature instability along the channel length in p-type metal oxide field effect transistor

    Boualem Djezzar, Hakim Tahi, Abdelmadjid Benabdelmoumene +1

    Мақола20132 иқтибос
    ABI

  12. Device scaling effects on hot-carrier induced interface and oxide-trapped charge distributions in MOSFETs

    Souvik Mahapatra, C.D. Parikh, V. Ramgopal Rao +2

    Мақола20002 иқтибос
    ABI

  13. Method to estimate profile of threshold voltage degradation in MOSFETs due to electrical stress

    Yeohyeok Yun, Jihoon Seo, Donghee Son +1

    Мақола20182 иқтибос
    ABI

  14. Correlating the Radiation Response of MOS Capacitors and Transistors

    P.S. Winokur, J.R. Schwank, P. J. McWhorter +2

    Мақола19842 иқтибос
    ABI

  15. A reliable approach to charge-pumping measurements in MOS transistors

    G. Groeseneken, H.E. Maes, N. Beltran +1

    Мақола19842 иқтибос
    ABI

  16. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  17. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI