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16 та иш

Иш: On the Band-Gap Width of NiSi2 Nanocrystals Created in the Surface Region of Si Using Ion Implantation

  1. On the creation of ordered nuclei by ion bombardment for obtaining nanoscale si structures on the surface of CaF2 films

    Б. Е. Умирзаков, S. B. Donaev

    МақолаIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201721 иқтибос
    ABI

  2. Investigation of change of the composition and structure of the CaF2/Si films surface at the low-energy bombardment

    Б. Е. Умирзаков, Д. А. Ташмухамедова, М. К. Рузибаева +2

    МақолаSilicon Nanostructures and PhotoluminescenceNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms201413 иқтибос
    ABI

  3. Escape Depth of Secondary and Photoelectrons from CdTe Films with a Ba Film

    Б. Е. Умирзаков, Д. А. Ташмухамедова, M. A. Tursunov +2

    МақолаElectron and X-Ray Spectroscopy TechniquesTechnical Physics201912 иқтибос
    ABI

  4. Photoelectron Si 2p spectra of ultrathin CoSi2 layers formed on Si(100)2×1

    M. V. Gomoyunova, I. I. Pronin, N. R. Gall +2

    Мақола20039 иқтибос
    ABI

  5. Laser Recrystallization and 3D Integration

    J.-P. Colinge

    Мақола19846 иқтибос
    ABI

  6. Scanning tunneling microscopy observation of ultrathin epitaxial CoSi2(111) films grown at a high temperature

    Aleksandr Alekseev, D.A. Olyanich, T.V. Utas +3

    Мақола20156 иқтибос
    ABI

  7. Control of the formation of ultrathin CoSi2 layers during the rapid thermal annealing of Ti/Co/Ti/Si(100) structures

    V. I. Rudakov, Yu. I. Denisenko, В. В. Наумов +1

    Мақола20115 иқтибос
    ABI

  8. Photoemission spectroscopy of the evolution of ultra-thin Co films on Si(111) substrates upon annealing temperature

    Ki-jeong Kim, Tai‐Hee Kang, Kwang-woo Kim +2

    Мақола20005 иқтибос
    ABI

  9. Structure of Epitaxial CoSi<sub>2</sub> Films on Si(111) Studied with Low-Energy Electron Diffraction (LEED)

    Ulrich Starke, J. Schardt, W. Weiß +3

    Мақола19984 иқтибос
    ABI

  10. Formation of defects in GaAs and Si as a result of Pd deposition onto the surface

    И. А. Карпович, С. В. Тихов, E. L. Shobolov +1

    Мақола20064 иқтибос
    ABI

  11. Surface Morphology of NiSi2/Si Films Obtained by the Method of Solid-Phase Deposition

    A. K. Tashatov, N. M. Mustafoyeva

    МақолаSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20203 иқтибос
    ABI

  12. Electronic and Optical Properties of NiSi2/Si Nanofilms

    Б. Е. Умирзаков, Д. А. Ташмухамедова, A. K. Tashatov +1

    МақолаSurface and Thin Film PhenomenaTechnical Physics20193 иқтибос
    ABI

  13. Potential variations around grain boundaries in impurity-doped BaSi2 epitaxial films evaluated by Kelvin probe force microscopy

    Daichi Tsukahara, Masako Baba, Syuta Honda +6

    Мақола20143 иқтибос
    ABI

  14. Effects of defect clustering on optical properties of GaN by single and molecular ion irradiation

    Mohammad W. Ullah, A. Kuronen, K. Nordlund +4

    Мақола20132 иқтибос
    ABI

  15. Electrical characterization and conduction mechanism of impurity-doped BaSi2 films grown on Si(111) by molecular beam epitaxy

    M. Ajmal Khan, T. Saito, Kotaro Nakamura +5

    Мақола20122 иқтибос
    ABI

  16. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI