Ушбу иш иқтибос қилган ишлар

7 та иш

Иш: Thermal sensor based on si single crystal implanted with different parties P⁺ and B⁺ ions

1. Formation of nanosize silicides films on the Si(111) and Si(100) surfaces by low-energy ion implantation

   А.С. Рысбаев, Zh. B. Khuzhaniyazov, A.M. Rakhimov +1

   МақолаSemiconductor materials and interfacesTechnical Physics201415 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.213638

2. Effect of thermal and laser annealing on the atom distribution profiles in Si(111) implanted with P+ and B+ ions

   А.С. Рысбаев, J. B. Khujaniyozov, I. R. Bekpulatov +2

   МақолаIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201712 иқтибос

   ABIABI:AkademIndex/openalex/2017.article.000091

3. Сарлавҳасиз

   Бошқа8 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.545705

4. Electron microscopy characterization of higher manganese silicide film structure on silicon

   Andrey Orekhov, T. S. Kamilov, Anton S. Orekhov +3

   МақолаSemiconductor materials and interfacesNanotechnologies in Russia20167 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.079735

5. Structure of thermoelectric films of higher manganese silicide on silicon according to electron microscopy data

   Andrey Orekhov, T. S. Kamilov, B.V. Ibragimova +2

   МақолаSemiconductor materials and interfacesSemiconductors20175 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.199258

6. Electron beam probe studies of semiconductor-insulator interfaces

   W. R. Bottoms, D.C. Guterman

   Мақола19742 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.630500

7. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.710229