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Ушбу иш иқтибос қилган ишлар

48 та иш

Иш: Effect of temperature and magnetic field on the density of surface states in semiconductor heterostructures

  1. Modeling on the temperature dependence of the magnetic susceptibility and electrical conductivity oscillations in narrow-gap semiconductors

    U. I. Erkaboev, G. Gulyamov, J. I. Mirzaev +1

    МақолаQuantum and electron transport phenomenaInternational Journal of Modern Physics B202020 иқтибос
    ABI

  2. Mathematical modeling determination coefficient of magneto-optical absorption in semiconductors in presence of external pressure and temperature

    U. I. Erkaboev, R. G. Rakhimov, N. A. Sayidov

    МақолаSemiconductor Quantum Structures and DevicesModern Physics Letters B202116 иқтибос
    ABI

  3. On Temperature Dependence of Longitudinal Electrical Conductivity Oscillations in Narrow-gap Electronic Semiconductors

    G. Gulyamov, U. I. Erkaboev, R. G. Rakhimov +1

    Мақола202015 иқтибос
    ABI

  4. Modeling the temperature dependence of the density oscillation of energy states in two-dimensional electronic gases under the impact of a longitudinal and transversal quantum magnetic fields

    U. I. Erkaboev, R. G. Rakhimov, N. A. Sayidov +1

    МақолаSemiconductor Quantum Structures and DevicesIndian Journal of Physics202215 иқтибос
    ABI

  5. A new method for determining the bandgap in semiconductors in presence of external action taking into account lattice vibrations

    U. I. Erkaboev, G. Gulyamov, R. G. Rakhimov

    МақолаSemiconductor Quantum Structures and DevicesIndian Journal of Physics202114 иқтибос
    ABI

  6. Influence of a quantizing magnetic field on the Fermi energy oscillations in two-dimensional semiconductors

    U. I. Erkaboev, Ulugbek M. Negmatov, R. G. Rakhimov +2

    МақолаSemiconductor Quantum Structures and DevicesInternational Journal of Applied Science and Engineering202214 иқтибос
    ABI

  7. Determination of the dependence of the two-dimensional combined density of states on external factors in quantum-dimensional heterostructures

    G. Gulyamov, U. I. Erkaboev, R. G. Rakhimov +2

    МақолаQuantum and electron transport phenomenaModern Physics Letters B202314 иқтибос
    ABI

  8. Influence of the two-dimensional density of states on the temperature dependence of the electrical conductivity oscillations in heterostructures with quantum wells

    Ulugbek Erkaboev, R. G. Rakhimov, J. I. Mirzaev +2

    МақолаSemiconductor Quantum Structures and DevicesInternational Journal of Modern Physics B202312 иқтибос
    ABI

  9. Magnetic Quantum Effects in Electronic Semiconductors at Microwave-radiation Absorption

    G. Gulyamov, У. И. Эркабоев, A. G. Gulyamov

    Мақола201912 иқтибос
    ABI

  10. Determination of the Dependence of the Oscillation of Transverse Electrical Conductivity and Magnetoresistance on Temperature in Heterostructures Based on Quantum Wells

    У. И. Эркабоев, R. G. Rakhimov

    МақолаSemiconductor Quantum Structures and DevicesEast European Journal of Physics202311 иқтибос
    ABI

  11. Influence of a magnetic field and temperature on the oscillations of the combined density of states in two-dimensional semiconductor materials

    U. I. Erkaboev, R. G. Rakhimov, J. I. Mirzaev +2

    МақолаSemiconductor Quantum Structures and DevicesIndian Journal of Physics202311 иқтибос
    ABI

  12. Determination of the Dependence of Transverse Electrical Conductivity and Magnetoresistance Oscillations on Temperature in Heterostructures Based on Quantum Wells

    U. I. Erkaboev, R. G. Rakhimov

    МақолаSemiconductor Quantum Structures and Devicese-Journal of Surface Science and Nanotechnology202311 иқтибос
    ABI

  13. Simulation of temperature dependence of oscillations of longitudinal magnetoresistance in nanoelectronic semiconductor materials

    Ulugbek Erkaboev, R. G. Rakhimov

    МақолаSemiconductor Quantum Structures and Devicese-Prime - Advances in Electrical Engineering Electronics and Energy202311 иқтибос
    ABI

  14. Calculation of the Fermi–Dirac Function Distribution in Two-Dimensional Semiconductor Materials at High Temperatures and Weak Magnetic Fields

    U. I. Erkaboev, G. Gulyamov, J. I. Mirzaev +2

    МақолаSurface and Thin Film PhenomenaNANO202111 иқтибос
    ABI

  15. Determination of the band gap of heterostructural materials with quantum wells at strong magnetic field and high temperature

    Ulugbek Erkaboev, R. G. Rakhimov, J. I. Mirzaev +3

    Мақола202311 иқтибос
    ABI

  16. Calculation of oscillations in the density of energy states in heterostructural materials with quantum wells

    U. I. Erkaboev, R. G. Rakhimov, J. I. Mirzaev +3

    Мақола202310 иқтибос
    ABI

  17. The Influence of Temperature on Magnetic Quantum Effects in Semiconductor Structures

    G. Gulyamov, U. I. Erkaboev, N. A. Sayidov +1

    МақолаSemiconductor Quantum Structures and DevicesJournal of Applied Science and Engineering20208 иқтибос
    ABI

  18. Kinetics of attaining the steady state of hot carrier thermoelectric power in a p-n junction with consideration for lattice heating

    G. Gulyamov, М. Г. Дадамирзаев, S. R. Boĭdedaev

    МақолаAdvanced Thermoelectric Materials and DevicesSemiconductors20005 иқтибос
    ABI

  19. TO THE THEORY OF ELECTROMOTIVE FORCE GENERATED IN POTENTIAL BARRIER AT ULTRAHIGH FREQUENCY FIELD

    M. Ahmetoğlu, Gönül Kaynak, S. H. Shamirzaev +5

    МақолаSemiconductor Quantum Structures and DevicesInternational Journal of Modern Physics B20095 иқтибос
    ABI

  20. Hot carrier electromotive force caused by surface potential modulation in a strong microwave field

    G. Gulyamov, М. Г. Дадамирзаев, S. R. Boĭdedaev

    МақолаElectromagnetic Effects on MaterialsSemiconductors20005 иқтибос
    ABI

  21. Calculation of the Total Current Generated in a Tunnel Diode Under the Action of Microwave and Magnetic Fields

    G. Gulyamov, Sharifa B. Utamuradova, Mukhamadjon G. Dadamirzaev +5

    МақолаSemiconductor Quantum Structures and DevicesEast European Journal of Physics20235 иқтибос
    ABI

  22. The nonideality coefficient of current-voltage characteristics for p-n junctions in a high ultrahigh-frequency (microwave) field

    S. H. Shamirzaev, G. Gulyamov, М. Г. Дадамирзаев +1

    МақолаSilicon and Solar Cell TechnologiesSemiconductors20095 иқтибос
    ABI

  23. Eddy currents appearing in a p-n junction in a high microwave field

    S. H. Shamirzaev, G. Gulyamov, М. Г. Дадамирзаев +1

    МақолаElectromagnetic Effects on MaterialsSemiconductors20115 иқтибос
    ABI

  24. Applicability of the empirical Varshni relation for the temperature dependence of the width of the band gap

    И. А. Вайнштейн, A. F. Zatsepin, В. С. Кортов

    Мақола19994 иқтибос
    ABI

  25. Сарлавҳасиз

    Бошқа2 иқтибос
    ABI