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12 та иш

Иш: Raman and IR Spectrum Analysis of CrSi2 Thin Films Formed in Direct Current and Variable Frequency Modes of a Magnetron Sputtering Device

  1. Formation and Electronic Structure of Barium-Monosilicide- and Barium-Disilicide Films

    M. T. Normurodov, А.С. Рысбаев, I. R. Bekpulatov +2

    МақолаSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques202117 иқтибос
    ABI

  2. Effect of thermal and laser annealing on the atom distribution profiles in Si(111) implanted with P+ and B+ ions

    А.С. Рысбаев, J. B. Khujaniyozov, I. R. Bekpulatov +2

    МақолаIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201712 иқтибос
    ABI

  3. Formation of thin Crsi <sub>2</sub> films by the solid-phase ion-plasma method and their thermoelectric properties

    I. R. Bekpulatov, Gunel Imanova, Б. Е. Умирзаков +5

    МақолаAdvanced Thermoelectric Materials and DevicesMaterials Research Innovations20249 иқтибос
    ABI

  4. Formation of Mn4Si7/Si(111), CrSi2/Si(111), and CoSi2/Si(111) Thin Film and Evaluation of Their Optically Direct and Indirect Band Gap

    K.T. Dovranov, Muradulla Normuradov, Kh.T. Davranov +1

    МақолаSemiconductor materials and interfacesUkrainian Journal of Physics20246 иқтибос
    ABI

  5. The solid-phase ion-plasma method and thermoelectric properties of thin CrSi2 films

    I. R. Bekpulatov, Gunel Imanova, S. H. Jabarov +8

    МақолаAdvanced Thermoelectric Materials and DevicesJournal of Materials Science Materials in Electronics20246 иқтибос
    ABI

  6. Structural, electrical, and thermoelectric properties of CrSi 2 thin films

    Makram Abd El Qader, Rama Venkat, Ravhi S. Kumar +4

    Мақола20134 иқтибос
    ABI

  7. Variations in the electronic structure of the silicon near-surface region during implantation of phosphorus and boron ions

    M.T. Normuradov, A. K. Tashatov, А.С. Рысбаев +4

    Мақола20072 иқтибос
    ABI

  8. Influence of Cr+ ion implantation and pulsed ion-beam annealing on the formation and optical properties of Si/CrSi2/Si(111) heterostructures

    N. G. Galkin, D. L. Goroshko, Konstantin N. Galkin +6

    Мақола20102 иқтибос
    ABI

  9. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  10. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  11. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  12. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI