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26 та иш

Иш: Influence of Temperature on Characteristics of a Diode with a p-n Junction in a Magnetic Field

  1. Current–voltage characteristics of manganite–titanite perovskite junctions

    Benedikt Ifland, Patrick Peretzki, Birte Kressdorf +4

    Мақола20152 иқтибос
    ABI
  2. Bipolar-driven large linear magnetoresistance in silicon at low magnetic fields

    Michael P. Delmo, Eiji Shikoh, Teruya Shinjo +1

    Мақола20132 иқтибос
    ABI
  3. Geometrical enhancement of low-field magnetoresistance in silicon

    Caihua Wan, Xiaozhong Zhang, Xili Gao +2

    Мақола20112 иқтибос
    ABI
  4. A Large Magnetoresistance Effect in p–n Junction Devices by the Space‐Charge Effect

    Dezheng Yang, Fangcong Wang, Yang Ren +4

    Мақола20132 иқтибос
    ABI
  5. Angular dependence of the magnetoresistance effect in a silicon based p–n junction device

    Tao Wang, Mingsu Si, Dezheng Yang +5

    Мақола20142 иқтибос
    ABI
  6. Magnetoresistance Amplification Effect in Silicon Transistor Device

    Tao Wang, Dezheng Yang, Mingsu Si +3

    Мақола20162 иқтибос
    ABI
  7. Light-Induced-Magnetoresistance in <i>p-n</i> Junction Device

    Yang Cao, Wenbo Sui, Tao Wang +4

    Мақола20202 иқтибос
    ABI
  8. Magnetically enhanced photoconductive high voltage control

    Gareth J. Monkman, Dirk Sindersberger, Nina Prem

    Мақола20222 иқтибос
    ABI
  9. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI
  10. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI
  11. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI
  12. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI
  13. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI
  14. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI