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Ушбу иш иқтибос қилган ишлар

21 та иш

Иш: A Comprehensive Study of the Impact of the Gate Oxide Material Composition on the Self-Heating Effect in Nanosheet Field Effect Transistor

  1. Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors

    Isabelle Ferain, Cynthia A. Colinge, Jean-Pierre Colinge

    Мақола201111 иқтибос
    ABI

  2. Short-channel effects in SOI MOSFETs

    S. Veeraraghavan, J.G. Fossum

    Мақола19897 иқтибос
    ABI

  3. The Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +1

    МақолаAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters20215 иқтибос
    ABI

  4. Optimization of vertically stacked nanosheet FET immune to self-heating

    M. Balasubbareddy, K. Sivasankaran, A. É. Atamuratov +1

    МақолаSemiconductor materials and devicesMicro and Nanostructures20235 иқтибос
    ABI

  5. Interfacial heat transport across multilayer nanofilms in ballistic–diffusive regime

    Hafedh Belmabrouk, Houssem Rezgui, Faouzi Nasri +2

    Мақола20203 иқтибос
    ABI

  6. Design optimization of nanoscale electrothermal transport in 10 nm SOI FinFET technology node

    Houssem Rezgui, Faouzi Nasri, Giovanni Nastasi +5

    Мақола20203 иқтибос
    ABI

  7. Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET

    N. Loubet, Terence B. Hook, P. Montanini +61

    Мақола20173 иқтибос
    ABI

  8. Thermal conductivity of amorphous SiO2 thin film: A molecular dynamics study

    Wenhui Zhu, Guangping Zheng, Sen Cao +1

    Мақола20183 иқтибос
    ABI

  9. Dimensioning for power and performance under 10nm: The limits of FinFETs scaling

    M. Garcia Bardon, P. Schuddinck, Prasanth Raghavan +5

    Мақола20152 иқтибос
    ABI

  10. Exploring sub-20nm FinFET design with predictive technology models

    Saurabh Sinha, Greg Yeric, Vikas Chandra +2

    Мақола20122 иқтибос
    ABI

  11. Extreme scaling enabled by 5 tracks cells: Holistic design-device co-optimization for FinFETs and lateral nanowires

    M. Garcia Bardon, Yasser Sherazi, P. Schuddinck +14

    Мақола20162 иқтибос
    ABI

  12. Thermal conductivity and thermal boundary resistance of atomic layer deposited high-<i>k</i> dielectric aluminum oxide, hafnium oxide, and titanium oxide thin films on silicon

    Ethan A. Scott, John T. Gaskins, Sean W. King +1

    Мақола20182 иқтибос
    ABI

  13. The last silicon transistor: Nanosheet devices could be the final evolutionary step for Moore's Law

    Peide D. Ye, T. Ernst, Mukesh Khare

    Мақола20192 иқтибос
    ABI

  14. Trap and self-heating effect based reliability analysis to reveal early aging effect in nanosheet FET

    Sunil Rathore, Rajeewa Kumar Jaisawal, P. N. Kondekar +1

    Мақола20222 иқтибос
    ABI

  15. Investigation of Analog/RF and linearity performance with self-heating effect in nanosheet FET

    Sunil Rathore, Rajeewa Kumar Jaisawal, P. N. Kondekar +1

    Мақола20232 иқтибос
    ABI

  16. Systematic performance benchmarking of nanosheet and FinFET: An intrinsic self-heating perspective

    Sunil Rathore, Rajeewa Kumar Jaisawal, Suneet Kumar Agnihotri +3

    Мақола20252 иқтибос
    ABI

  17. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

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    Бошқа1 иқтибос
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  20. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  21. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI