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16 та иш

Иш: Thermal stability parameters of silicon doped with nickel impurity atoms

  1. Nickel: A very fast diffuser in silicon

    Jeanette Lindroos, David P. Fenning, D. J. Backlund +5

    Мақола201317 иқтибос
    ABI

  2. Radiation Stability of Nickel Doped Solar Cells

    К. А. Исмайлов, Z. T. Kenzhaev, S. Koveshnikov +2

    МақолаSilicon and Solar Cell TechnologiesPhysics of the Solid State20229 иқтибос
    ABI

  3. Influence of electrically neutral nickel atoms on electrical and recombination parameters of silicon

    М. К. Бахадырханов, B. K. Ismaylov, С. А. Тачилин +2

    Мақола20209 иқтибос
    ABI

  4. Clusters of impurity nickel atoms and their migration in the crystal lattice of silicon

    B. K. Ismaylov, N. F. Zikrillayev, К. А. Исмайлов +1

    МақолаMaterial Science and ThermodynamicsPhysical Sciences and Technology20237 иқтибос
    ABI

  5. X-Ray Diffraction and Raman Spectroscopy Analyses of GaSb-Enriched Si Surface Formed by Applying Diffusion Doping Technique

    Xalmurat M. Iliyev, В. Б. Оджаев, Sobir B. Isamov +5

    МақолаSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20236 иқтибос
    ABI

  6. Interaction between multiply charged manganese nanoclusters and sulfur atoms in silicon

    Z.M. Saparniyazova, М. К. Бахадырханов, О. Э. Саттаров +4

    МақолаSemiconductor materials and interfacesInorganic Materials20125 иқтибос
    ABI

  7. Development of an educational simulator’s working logic for the course “fundamentals of power supply”

    Mirkomil Melikuziev, Zarina Fayzrakhmanova, Anvar Akhmedov +1

    МақолаEngineering and Agricultural InnovationsAIP conference proceedings20245 иқтибос
    ABI

  8. Formation of complexes consisting of impurity Mn atoms and group VI elements in the crystal lattice of silicon

    К. А. Исмайлов, X. M. Iliev, M. O. Tursunov +1

    Мақола20215 иқтибос
    ABI

  9. Issues of the design procedure for the power supply system

    Mirkomil Melikuziev, Saidbek Usmonaliev, Nodirbek Khudoyberdiev +2

    МақолаEngineering and Agricultural InnovationsAIP conference proceedings20244 иқтибос
    ABI

  10. Suppression of harmful impurity atoms with clusters of nickel impurity atoms in a silicon lattice

    Ismaylov Bayrambay, Ismailov Kanatbay, Kamalov Khayratdin +1

    МақолаSilicon and Solar Cell TechnologiesAIP conference proceedings20234 иқтибос
    ABI

  11. The High-temperature analysis of silicon properties with manganese-oxygen binary complexes

    M. O. Tursunov, Khalmurat Iliev, B. K. Ismaylov

    МақолаSemiconductor materials and interfacesPhysical Sciences and Technology20243 иқтибос
    ABI

  12. X-ray beam induced current—a synchrotron radiation based technique for the <i>in situ</i> analysis of recombination properties and chemical nature of metal clusters in silicon

    О. Ф. Вывенко, Tonio Buonassisi, A. A. Istratov +4

    Мақола20023 иқтибос
    ABI

  13. Effect of ultrasound treatment on the electro-physical properties of the structure of Al-Al2O3-p-CdTe

    A.K. Uteniazov

    Мақола20193 иқтибос
    ABI

  14. Physical mechanism of gettering of impurity Ni atom clusters in Si lattice

    B. K. Ismaylov, N. F. Zikrillayev, К. А. Исмайлов +1

    Мақола20243 иқтибос
    ABI

  15. The Physical mechanisms of gettering properties of nickel clusters in silicon solar cells

    Zoir Kenjayev, Khalmurat Iliev, Kanatbay A. Ismailov +4

    МақолаSilicon and Solar Cell TechnologiesPhysical Sciences and Technology20242 иқтибос
    ABI

  16. Composition of Silicon Alloyed with Gallium and Phosphorus Atoms

    Н. Ф. Зикриллаев, S. Koveshnikov, X. S. Turekeev +1

    МақолаSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20241 иқтибос
    ABI