Асосий контентга ўтиш
AkademIndex

Маҳсулотлар

Ишлаб чиқувчилар учун

AkademBaseЭкотизим учун очиқ API
← Ишга қайтиш

Ушбу иш иқтибос қилган ишлар

16 та иш

Иш: The Influence of γ-Irradiation on the Electrophysical Parameters of Nickel-Doped Silicon Grown by the Czochralski Method

  1. Radiation Stability of Nickel Doped Solar Cells

    К. А. Исмайлов, Z. T. Kenzhaev, S. Koveshnikov +2

    МақолаSilicon and Solar Cell TechnologiesPhysics of the Solid State20229 иқтибос
    ABI

  2. Clusters of nickel atoms and controlling their state in silicon lattice

    М. К. Бахадырханов

    МақолаSilicon Nanostructures and PhotoluminescenceSemiconductor Physics Quantum Electronics & Optoelectronics20189 иқтибос
    ABI

  3. Influence of electrically neutral nickel atoms on electrical and recombination parameters of silicon

    М. К. Бахадырханов, B. K. Ismaylov, С. А. Тачилин +2

    Мақола20209 иқтибос
    ABI

  4. Nickel solubility in intrinsic and doped silicon

    A. A. Istratov, P. Zhang, R. J. McDonald +6

    Мақола20045 иқтибос
    ABI

  5. Interaction of radiation defects with nickel atom clusters in silicon

    Х. М. Илиев, Z.M. Saparniyazova, К. А. Исмайлов +2

    МақолаGraphite, nuclear technology, radiation studiesSurface Engineering and Applied Electrochemistry20115 иқтибос
    ABI

  6. Effect of nickel on the lifetime of charge carriers in silicon solar cells

    Bakhadyrkhanov M.K., Kenzhaev Z.T., S. Koveshnikov +2

    МақолаSilicon and Solar Cell TechnologiesФизика и техника полупроводников20225 иқтибос
    ABI

  7. Transition metals in silicon

    Eicke R. Weber

    Мақола19834 иқтибос
    ABI

  8. Energy levels of vacancies and interstitial atoms in the band gap of silicon

    V. V. Lukjanitsa

    Мақола20034 иқтибос
    ABI

  9. Thermal stability of electrical parameters of silicon crystal doped with nickel during growth

    M.K. Bakhadyrkhanov, Kanatbay A. Ismailov, E.Zh. Kosbergenov

    Мақола20223 иқтибос
    ABI

  10. The Elemental Composition Investigation of Silicon Doped with Gallium and Antimony Atoms

    Х. М. Илиев, S. Koveshnikov, B. O. Isakov +3

    МақолаSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20242 иқтибос
    ABI

  11. Ti, Fe, and Ni in Si and their interactions with the vacancy and the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>A</mml:mi></mml:math>center: A theoretical study

    D. J. Backlund, S. K. Estreicher

    Мақола20102 иқтибос
    ABI

  12. On the problem of Watkins substitution and migration of silicon atoms in silicon

    N. I. Berezhnov, A. R. Chelyadinskiĭ, M. Jadan +1

    Мақола19932 иқтибос
    ABI

  13. The Effect of Gamma Irradiation on the Electrophysical Parameters of Nickel-Doped Silicon Solar Cells

    Z. T. Kenzhaev, Х. М. Илиев, В. Б. Оджаев +6

    МақолаSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20241 иқтибос
    ABI

  14. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  15. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  16. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI