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Ушбу иш иқтибос қилган ишлар

40 та иш

Иш: Experimental and Simulation-Based Investigation of p-Si/n-CdS Heterojunctions: From Cryogenic Freeze-Out to Room Temperature Operation

  1. Optimization of The Influence of Temperature on The Electrical Distribution of Structures with Radial p-n Junction Structures

    Jo`shqin Abdullayev, I. B. Sapaev

    МақолаAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202414 иқтибос
    ABI

  2. OPTIMIZING THE INFLUENCE OF DOPING AND TEMPERATURE ON THE ELECTROPHYSICAL FEATURES OF P-N AND P-I-N JUNCTION STRUCTURES

    Jo`shqin Abdullayev, I. B. Sapaev

    Мақола202413 иқтибос
    ABI

  3. Surface-Potential-Based Drain Current Analytical Model for Triple-Gate Junctionless Nanowire Transistors

    Renan Trevisoli, Rodrigo T. Doria, Michelly de Souza +3

    Мақола201211 иқтибос
    ABI

  4. An Explicit Quantum-Mechanical Compact Model for the <italic>I-V</italic> Characteristics of Cylindrical Nanowire MOSFETs

    Regiane Ragi, Rafael Nobrega, Ulysses Rondina Duarte +1

    Мақола201611 иқтибос
    ABI

  5. Factors Influencing the Ideality Factor of Semiconductor p-n and p-i-n Junction Structures at Cryogenic Temperatures

    Jo`shqin Abdullayev, I. B. Sapaev

    МақолаSemiconductor materials and interfacesEast European Journal of Physics202410 иқтибос
    ABI

  6. GaN nanowire ultraviolet photodetector with a graphene transparent contact

    A. V. Babichev, H. Zhang, Pierre Lavenus +5

    Мақола201310 иқтибос
    ABI

  7. Fabrication and studies on Si/InP core-shell nanowire based solar cell using etched Si nanowire arrays

    Biswajit Pal, Kalyan Jyoti Sarkar, P. Banerji

    Мақола201910 иқтибос
    ABI

  8. Influence of the parameters to transition capacitance at NCDS-PSI heterostructure

    I.B. Sapaev, Б. Сапаев, Diyorjon Àbdullaev +5

    МақолаChalcogenide Semiconductor Thin FilmsE3S Web of Conferences20239 иқтибос
    ABI

  9. Modeling and calibration of electrical features of p-n junctions based on Si and GaAs

    Jo`shqin Abdullayev, I. B. Sapaev

    МақолаSemiconductor materials and interfacesPhysical Sciences and Technology20249 иқтибос
    ABI

  10. Theoretical analysis of incomplete ionization on the electrical behavior of radial <i>p-n</i> junction structures

    Jo`shqin Abdullayev, I. B. Sapaev, Kh. N. Juraev

    МақолаSemiconductor Quantum Structures and DevicesLow Temperature Physics20259 иқтибос
    ABI

  11. Efficient photogeneration of charge carriers in silicon nanowires with a radial doping gradient

    Dharmapura H. K. Murthy, Tao Xu, Wanghua Chen +11

    Мақола20119 иқтибос
    ABI

  12. Improvement of carrier ballisticity in junctionless nanowire transistors

    Nima Dehdashti Akhavan, Isabelle Ferain, Pedram Razavi +2

    Мақола20119 иқтибос
    ABI

  13. A GaAs Nanowire Array Solar Cell With 15.3% Efficiency at 1 Sun

    Ingvar Åberg, Giuliano Vescovi, Damir Asoli +8

    Мақола20159 иқтибос
    ABI

  14. Analytic Analysis of the Features of GaAs/Si Radial Heterojunctions: Influence of Temperature and Concentration

    Jo`shqin Abdullayev, I. B. Sapaev

    МақолаAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20257 иқтибос
    ABI

  15. Influence of Linear Doping Profiles on the Electrophysical Features of p-n Junctions

    Jo`shqin Abdullayev

    МақолаAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20257 иқтибос
    ABI

  16. Optical and electrical modeling of solar cells based on graphene/Si nanowires with radial p–i–n junctions

    Zahra Arefinia, Asghar Asgari

    Мақола20157 иқтибос
    ABI

  17. Potential distribution over temperature sensors of p-n junction diodes with arbitrary doping of the base region

    R. R. Bebitov, O. A. Abdulkhaev, D. M. Yodgorova +6

    МақолаAdvanced Semiconductor Detectors and MaterialsE3S Web of Conferences20236 иқтибос
    ABI

  18. High efficiency silicon solar cell based on asymmetric nanowire

    Myung-Dong Ko, Taiuk Rim, Ki‐Hyun Kim +2

    Мақола20156 иқтибос
    ABI

  19. Analytical modelling and device design optimisation of epitaxial layer‐based III–V tunnel FET

    Prabhat Kumar Dubey, Brajesh Kumar Kaushik, Eddy Simoen

    Мақола20196 иқтибос
    ABI

  20. Fully analytical compact model for the Q–V and C–V characteristics of cylindrical junctionless nanowire FETs

    Adelcio M. de Souza, Daniel R. Celino, Regiane Ragi +1

    Мақола20216 иқтибос
    ABI

  21. ENHANCEMENT OF POWER CONVERSION EFFICIENCY OF DYE-SENSITIZED SOLAR CELLS VIA INCORPORATION OF GAN SEMICONDUCTOR MATERIAL SYNTHESIZED IN HOT-WALL CHEMICAL VAPOR DEPOSITION FURNACE

    Olzat Toktarbaiuly

    Мақола20246 иқтибос
    ABI

  22. Mathematical Analysis of the Features of Radial p-n Junction: Influence of Temperature and Concentration

    Jo`shqin Abdullayev, I. B. Sapaev, N.Sh. Esanmuradova +2

    МақолаAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20255 иқтибос
    ABI

  23. The Role of Recombination Types in Efficiency Limits of Radial p n junctions based on Si and GaAs

    Jo`shqin Abdullayev, I. B. Sapaev, Sardor R. Kadirov

    МақолаAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20255 иқтибос
    ABI

  24. Synthesis and Characterization of CdS, ZnS and CdZnS Nanoparticles Embedded in Polystyrene

    Olumide Oluwole Akinwunmi, Gabriel O. Egharevba, E.O.B. Ajayi

    Мақола20144 иқтибос
    ABI

  25. Photoluminescence and<i>I</i>-<i>V</i>characteristics of a CdS-nanoparticles-porous-silicon heterojunction

    Neelima Deshmukh, Tejashree Bhave, Anita Sagadevan Ethiraj +4

    Мақола20014 иқтибос
    ABI