Ушбу ишга иқтибос қилган ишлар

3 та иш

Иш: On the possibility of developing thermoelectric sensors based on multielement higher manganese silicide film structures

1. The Influence of Structural Defects in Silicon on the Formation of Photosensitive Mn4Si7–Si❬Mn❭–Mn4Si7 and Mn4Si7–Si❬Mn❭–M Heterostructures

   T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

   МақолаSemiconductor materials and interfacesApplied Solar Energy201921 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.079743

2. Formation of Nanosized Films of Chromium Silicides on Silicon Surface

   Makhmudhodzha Isaev, Abdumalik Gaibov, Abdigani Eshkulov +1

   БобSemiconductor materials and interfacesLecture notes in networks and systems20213 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.401148

3. About the Interface Between the Higher Manganese Silicide Film and Si (111)

   T. S. Kamilov, D.K. Kabilov, S.Kh. Babadjanov +5

   МақолаSemiconductor materials and interfaces20060 иқтибос

   ABIABI:AkademIndex/openalex/2006.article.000312