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6 та иш

Иш: Electronic properties of semiconducting silicides: fundamentals and recent predictions

  1. The Influence of Structural Defects in Silicon on the Formation of Photosensitive Mn4Si7–Si❬Mn❭–Mn4Si7 and Mn4Si7–Si❬Mn❭–M Heterostructures

    T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

    МақолаSemiconductor materials and interfacesApplied Solar Energy201921 иқтибос
    ABI

  2. Formation of nanosize silicides films on the Si(111) and Si(100) surfaces by low-energy ion implantation

    А.С. Рысбаев, Zh. B. Khuzhaniyazov, A.M. Rakhimov +1

    МақолаSemiconductor materials and interfacesTechnical Physics201415 иқтибос
    ABI

  3. Structure of МеSi Silicide Films (Me: Li, Rb, K and Cs) According to Electron Microscopy Data and the Diffraction of Slow Electrons

    M.T. Normuradov, A. S. Risbaev, J. B. Khujaniyozov +1

    МақолаSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20202 иқтибос
    ABI

  4. On the Formation of Silicide Films of Metals (Li, Cs, Rb, and Ba) During Ion Implantation in Si and Subsequent Thermal Annealing

    А.С. Рысбаев, M. T. Normurodov, J. B. Khujaniyozov +2

    МақолаSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20211 иқтибос
    ABI

  5. Structure and Thermoelectric Properties of β-FeSi2 Doped with Cobalt

    F. Yu. Solomkin, Н. В. Шаренкова, Г. Н. Исаченко +5

    МақолаSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20240 иқтибос
    ABI

  6. Structure and thermoelectric properties of β-FeSi<sub>2</sub> doped with cobalt

    F. Yu. Solomkin, Н. В. Шаренкова, Г. Н. Исаченко +5

    МақолаSemiconductor materials and interfacesПоверхность Рентгеновские синхротронные и нейтронные исследования20240 иқтибос
    ABI